Cracks in GaN/AlN multiple quantum well structures grown by MBE

Due to the large lattice constant mismatch and thermal expansion coefficient difference between GaN and AlN, large strain is generated inside the GaN/AlN multiple quantum wells, which causes cracks in the structure. We investigated such cracks by optical microscopy and AFM. The crack density was studied with buffer and cap layer thickness, the number of quantum well periods, and the temperature reduction rate after growth as parameters. It was found that the crack density increased exponentially, with the number of periods above 4. Besides, a very thin, 100 nm, GaN buffer layer and similar to 300 nm GaN cap layer greatly reduced the crack density

Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.Peer reviewe

Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures

We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises from the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the k-dependent spin splitting at high values of k is attributed to Dresselhaus term which is enhanced by the Delta C1-Delta C3 coupling of wurtzite band folding effect

Monolithically Integratable Colliding Pulse Modelocked Laser Source for O-CDMA Photonic Chip Development

We demonstrate modelocking of a colliding-pulse mode-locked laser formed by 3-μm-deep etched-mirrors on an InP platform for integration with passive waveguide components. Timing jitter of 243 fs and pulse width of 10 ps were measured

Optical-CDMA in InP

This paper describes the InP platforms for photonic integration and the development on these platforms of an optical code division multiple access (O-CDMA) system for local area networks. We demonstrate three building blocks of this system: an optical pulse source, an encoder/decoder pair, and a threshold detector. The optical pulse source consists of an integrated colliding pulse-mode laser with nearly transform-limited 10 Gb/s pulses and optical injection locking to an external clock for synchronization. The encoder/decoder pair is based on arrayed waveguide gratings. Bit-error-rate measurements involving six users at 10 Gb/s showed error-free transmission, while O-CDMA codes were calibrated using frequency resolved optical gating. For threshold detection after the decoder, we compared two Mach--Zehnder interferometer (MZI)-based optical thresholding schemes and present results on a new type of electroabsorber-based MZI

Monolithically Integratable Colliding Pulse Modelocked Laser Source for O-CDMA Photonic Chip Development

We demonstrate modelocking of a colliding-pulse mode-locked laser formed by 3-μm-deep etched-mirrors on an InP platform for integration with passive waveguide components. Timing jitter of 243 fs and pulse width of 10 ps were measured

Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer

We present a model for the filtration of dislocations inside the seed window in epitaxial lateral overgrowth (ELO). We found that, when the additive effects of image and gliding forces exceed the defect line tension force, filtering can occur even in the openings. The model is applied to ELO of InP on Si where the opening size and the thermal stress arising due to the mask and the grown material are taken into account and analyzed. Further, we have also designed the mask patterns in net structures, where the tilting angles of the openings in the nets are chosen in order to take advantage of the filtering in the openings more effectively, and to minimize new defects due to coalescence in the ELO. Photoluminescence intensities of ELO InP on Si and on InP are compared and found to be in qualitative agreement with the model.We would like to acknowledge A. Grishin for fruitful discussion and F. Gerard and A. R. Alija for help with the e-beam lithography and RIBE fabrication. The project was partly funded by the Swedish Foundation for Strategic Research and EU NoEs PHOREMOST (Grant No. IST-2-511616-NOE), SANDIE (Grant No. NMP4-CT-2004-500101), and by the Spanish MEC and CAM through projects NANOSELFII (Grant No. TEC-2005-05781-C03-01), MEC (Grant No. MAT2005-01388), Grant Nos.NAN2004-09109-C04, NAN2004-08843-C05-04, Consolider-CSD 2006-19, and CAM S-0505-/ESP-0200.Peer reviewe